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157 polycrystalline silicon wafer

Introduction

Polycrystalline silicon wafer is a form of elemental silicon. When molten elemental silicon solidifies under supercooled conditions, silicon atoms are arranged in the form of diamond lattice into many crystal nuclei. If these crystal nuclei grow into grains with different crystal orientations, these grains combine to form polycrystalline silicon.

parameters

01 Side length

157±0.25mm

02 diagonal

220.8±1mm

03 wafer thickness

175+20

04 oxygen content

≤ 6 × 10 to the 17th power atoms

05 carbon content

≤ 7 × 10 to the 17th power atoms

06 Conductive type/dopant

P/Borom

07 verticality

90 degrees ± 0.3 degrees

08 Minority carrier lifetime (silicon block)

≥4.5us

09 resistivity

0.5-3Ω·cm

10 TTV

≤30um

11 saw mark

≤15um